SI3900DV-T1-GE3 Bei (USD) [203660pcs Hisa]
- 1 pcs$0.18161
- 3,000 pcs$0.17054
- Nambari ya Sehemu:
- SI3900DV-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 20V 2A 6-TSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - JFETs, Viwango - Zener - Moja, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI3900DV-T1-GE3 electronic components. SI3900DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3900DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3900DV-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI3900DV-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 20V 2A 6-TSOP
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2A
Njia ya Kutumia (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
830mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
Kifurushi cha Kifaa cha Mtoaji :
6-TSOP
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