Nambari ya Sehemu :
IPB80N06S209ATMA2
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 55V 80A TO263-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
8.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 125µA
Malango ya Lango (Qg) (Max) @ Vgs :
80nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2360pF @ 25V
Kuondoa Nguvu (Max) :
190W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-3-2
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB