Nambari ya Sehemu :
1N3595US
Mzalishaji :
Microsemi Corporation
Maelezo :
DIODE GEN PURP 4A B-MELF
Voltage - DC Reverse (Vr) (Max) :
-
Sasa - Wastani Aliyerekebishwa (Io) :
4A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1V @ 200mA
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
3µs
Sasa - Rejea kuvuja @ Vr :
1nA @ 125V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SQ-MELF, B
Kifurushi cha Kifaa cha Mtoaji :
B, SQ-MELF
Joto la Kufanya kazi - Junction :
-65°C ~ 150°C